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april 2009 doc id 15565 rev 1 1/12 12 STP5NK65ZFP n-channel 650 v, 1.5 ? , 4.5 a to-220fp zener-protected supermesh? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances very good manufact uring repeatability improved esd capability applications switching application description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage power mosfets including revolutionary mdmesh? products figure 1. internal schematic diagram type v dss r ds(on) max i d pw STP5NK65ZFP 650 v < 1.8 ? 4.5 a 25 w 1 2 3 to-220fp table 1. device summary order codes marking package packaging STP5NK65ZFP p5nk65zfp to-220fp tube www.st.com
electrical ratings STP5NK65ZFP 2/12 doc id 15565 rev 1 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 650 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 4.5 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 3.1 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 18 (1) a p tot total dissipation at t c = 25 c 25 w derating factor 0.6 w/c v esd(g-s) gate source esd (hbm-c=100 pf, r=1.5 k ?) 2000 v dv/dt (3) 3. i sd 5.7 a, di/dt 200 a/s, vdd =80% v (br)dss. peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 v table 3. absolute maximum ratings symbol parameter value unit r thj-case thermal resistance junction-case max 5 v r thj-amb thermal resistance junc tion-ambient max 62.5 v t l maximum lead temperature for soldering purpose 300 a table 4. absolute maximum ratings symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4.2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 170 mj
STP5NK65ZFP electrical characteristics doc id 15565 rev 1 3/12 2 electrical characteristics (tcase =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1 ma, v gs = 0 650 - - v i dss zero gate voltage drain current (v gs = 0) v ds =max rating v ds =max rating @125 c -- 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v - - 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.1 a - 1.5 1.8 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward transconductance v ds =10 v , i d = 2.1 a - 5 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1mhz, v gs = 0 - 680 80 17 - pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss. equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 98 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 4.5 a, v gs = 10 v figure 16 - 25 4.4 13.7 35 nc nc nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 325 v, i d = 2.1 a, r g = 4.7 ?, v gs = 10 v figure 15 - 20 15 140 40 - ns ns ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 325 v, i d = 2.1 a, r g =4.7 ?, v gs = 10 v figure 15 - 12 7 15 - ns ns ns
electrical characteristics STP5NK65ZFP 4/12 doc id 15565 rev 1 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) -- 4.5 18 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 4.5 a, v gs = 0 - - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4.5 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c figure 20 - 375 1.76 10 - ns nc a table 9. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 - - v
STP5NK65ZFP electrical characteristics doc id 15565 rev 1 5/12 2.1 electrical char acteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain source on resistance i d 10 1 0.1 0.01 0.1 1 100 v d s ( v ) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s 1 s tj=150c tc=25c s inlge p u l s e am0 33 26v1
electrical characteristics STP5NK65ZFP 6/12 doc id 15565 rev 1 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. avalanche energy vs starting tj e a s 0 40 t j (c) (mj) 20 100 60 8 0 10 3 0 50 120 140 70 90 110 1 3 0 150 170 i d =4.2 a v dd =50 v am0 33 27v1
STP5NK65ZFP electrical characteristics doc id 15565 rev 1 7/12 figure 14. normalized bv dss vs temperature
test circuits STP5NK65ZFP 8/12 doc id 15565 rev 1 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STP5NK65ZFP package mechanical data doc id 15565 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STP5NK65ZFP 10/12 doc id 15565 rev 1 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
STP5NK65ZFP revision history doc id 15565 rev 1 11/12 5 revision history table 10. document revision history date revision changes 16-apr-2009 1 first issue
STP5NK65ZFP 12/12 doc id 15565 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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